The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 28, 2017
Filed:
Mar. 01, 2016
SK Hynix Inc., Gyeonggi-do, KR;
Eun-Seok Choi, Gyeonggi-do, KR;
Sa-Yong Shim, Gyeonggi-do, KR;
In-Hey Lee, Gyeonggi-do, KR;
Sung-Wook Jung, Gyeonggi-do, KR;
Jung-Seok Oh, Gyeonggi-do, KR;
SK Hynix Inc., Gyeonggi-do, KR;
Abstract
A nonvolatile memory device includes a substrate comprising a first word line formation area, a second word line formation area, and a support area interposed between the first and second word line formation areas; a first stacked structure disposed over the substrate of each of the first and second word line formation areas and having a plurality of interlayer dielectric layers and a plurality of conductive layers that are alternately stacked therein; a second stacked structure disposed over the substrate of the support area and having the plurality of interlayer dielectric layers and a plurality of spaces that are alternately stacked therein; a channel layer disposed in the first stacked structure; and a memory layer interposed between the channel layer and each of the plurality of conductive layers.