The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 28, 2014

Filed:

Nov. 25, 2011
Applicants:

Hyun-seung Yoo, Gyeonggi-do, KR;

Eun-seok Choi, Gyeonggi-do, KR;

Inventors:

Hyun-Seung Yoo, Gyeonggi-do, KR;

Eun-Seok Choi, Gyeonggi-do, KR;

Assignee:

Hynix Semiconductor Inc., Gyeonggi-do, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/78 (2006.01); H01L 21/336 (2006.01);
U.S. Cl.
CPC ...
Abstract

A nonvolatile memory device includes a channel vertically extending from a substrate and comprising a first region that is doped with first impurities and a second region that is disposed under the first region, a plurality of memory cells and a selection transistor stacked over the substrate along the channel, and a diffusion barrier interposed between the first region and the second region, wherein a density of the first impurities is higher than a density of impurities of the second region.


Find Patent Forward Citations

Yoo, Hyun-Seung. (2014). Nonvolatile memory device and method for fabricating the same (U.S. Patent No. 8637913). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/8637913

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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