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For the Inventor, By the Inventor

Orefield, PA, United States of America

Eugene Joseph Karwacki, Jr

This inventor holds 38 USPTO granted patents and 3 published patent applications and 6 EPO patents, primarily in Silicon Film Deposition. Top assignee: Air Products and Chemicals, Inc.. Active years: 1991-2016.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Eugene Joseph Karwacki, Jr. Retrieved from https://idiyas.com/inventor/eugene-joseph-karwacki-jr

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 38 

% Patents Active = 65.8

 

Average Co-Inventor Count = 4.8

ph-index = 15

Forward Citations = 2,010(Granted Patents)


Company Filing History:

goldMedal38 out of 3,219 
 
Air Products and Chemicals, Inc.
 patents

Years Active: 1991-2016

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Areas of Expertise:
Carbon-Doped Films
Plasma Enhanced CVD
Controlled Voids
Xenon Recovery
Low Dielectric Materials
Acetylene Processes
Surfactant Solutions
Mechanical Enhancement
Etching Techniques
High Dielectric Materials
Semiconductor Equipment
UV Exposure
38 patents (USPTO):Explore Patents
1. 9447287 - Compositions and processes for depositing carbon-doped silicon-containing films (2016-09-20),
2. 9293361 - Materials and methods of forming controlled void (2016-03-22),
3. 8915992 - Process and system for providing acetylene (2014-12-23),
4. 8906455 - Low temperature deposition of silicon-containing films (2014-12-09),
5. 8846522 - Materials and methods of forming controlled void (2014-09-30),
6. 8828505 - Plasma enhanced cyclic chemical vapor deposition of silicon-containing films (2014-09-09),
7. 8795411 - Method for recovering high-value components from waste gas streams (2014-08-05),
8. 8591634 - Method and equipment for selectively collecting process effluent (2013-11-26),
9. 8535414 - Recovering of xenon by adsorption process (2013-09-17),
10. 8399349 - Materials and methods of forming controlled void (2013-03-19),
11. 8298628 - Low temperature deposition of silicon-containing films (2012-10-30),
12. 8278222 - Selective etching and formation of xenon difluoride (2012-10-02),
13. 8227395 - Process solutions containing surfactants (2012-07-24),
14. 8129577 - Process and system for providing acetylene (2012-03-06),
15. 7932188 - Mechanical enhancement of dense and porous organosilicate materials by UV exposure (2011-04-26),

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Title: Eugene Joseph Karwacki, Jr: Pioneering Innovator in Carbon-Doped Silicon Films

Introduction: Eugene Joseph Karwacki, Jr., a brilliant inventor hailing from Orefield, PA, has left an indelible mark in the world of patents with an impressive total of 36 patents under his name.

Latest Patents: Among his recent notable inventions is the development of compositions and processes for depositing carbon-doped silicon-containing films. These compositions involve a unique combination of precursors that enable the deposition of high-quality films using advanced methods such as CCVD, ALD, PEALD, and PECCVD. Another breakthrough patent involves a cutting-edge system for providing high-purity acetylene, ensuring minimal solvent contamination at the point of use.

Career Highlights: Eugene Joseph Karwacki, Jr. is associated with the renowned company Air Products and Chemicals, Inc., where his innovative spirit has thrived. His expertise and dedication have led to numerous groundbreaking advancements in the field of materials science and chemical engineering.

Collaborations: Throughout his career, Eugene has collaborated closely with esteemed coworkers such as Mark Leonard O'Neill and Aaron Scott Lukas. Together, they have tackled complex challenges and pushed the boundaries of technological innovation.

Conclusion: In conclusion, Eugene Joseph Karwacki, Jr. stands as a shining example of a visionary inventor, whose contributions have significantly impacted the realm of material sciences. His relentless pursuit of excellence and passion for innovation continue to inspire the next generation of inventors and researchers in the field.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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