The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 30, 2012
Filed:
Jun. 02, 2009
Liu Yang, Yorba Linda, CA (US);
Xinjian Lei, Vista, CA (US);
Bing Han, Lansdale, PA (US);
Manchao Xiao, San Diego, CA (US);
Eugene Joseph Karwacki, Jr., Orefield, PA (US);
Kazuhide Hasebe, Nirasaki, JP;
Masanobu Matsunaga, Nirasaki, JP;
Masato Yonezawa, Nirasaki, JP;
Hansong Cheng, Allentown, PA (US);
Liu Yang, Yorba Linda, CA (US);
Xinjian Lei, Vista, CA (US);
Bing Han, Lansdale, PA (US);
Manchao Xiao, San Diego, CA (US);
Eugene Joseph Karwacki, Jr., Orefield, PA (US);
Kazuhide Hasebe, Nirasaki, JP;
Masanobu Matsunaga, Nirasaki, JP;
Masato Yonezawa, Nirasaki, JP;
Hansong Cheng, Allentown, PA (US);
Air Products and Chemicals, Inc., Allentown, PA (US);
Abstract
This invention discloses the method of forming silicon nitride, silicon oxynitride, silicon oxide, carbon-doped silicon nitride, carbon-doped silicon oxide and carbon-doped oxynitride films at low deposition temperatures. The silicon containing precursors used for the deposition are monochlorosilane (MCS) and monochloroalkylsilanes. The method is preferably carried out by using plasma enhanced atomic layer deposition, plasma enhanced chemical vapor deposition, and plasma enhanced cyclic chemical vapor deposition.