Air Products and Chemicals, Inc.

Tokyo Electron Limited

Versum Materials Us, LLC

Eugene Joseph Karwacki, Jr

Mark Leonard O'Neill

Raymond Nicholas Vrtis

Aaron Scott Lukas

Jean Louise Vincent

Dingjun Wu

Mark Daniel Bitner

Bing Ji

Andrew David Johnson

Stephen Andrew Motika

Peng Zhang

Leslie Cox Barber

Xinjian Lei

Manchao Xiao

Danielle Megan King Curzi

Timothy Christopher Golden

Bing Han

Thomas Stephen Farris

Ronald Martin Pearlstein

Robert Gordon Ridgeway

Howard P Withers, Jr

Jeffrey Raymond Hufton

Philip Bruce Henderson

Neil Alexander Downie

Hansong Cheng

Liu Yang

John Irven

Peter James Maroulis

Suhas Narayan Ketkar

David Charles Winchester

Scott Edward Beck

Ralph J Ciotti

Timothy John Maykut

Benjamin James Arthur Inman

Matthew John Bosco

Kazuhide Hasebe

David A Roberts

Thomas R Gaffney

Fred M Kimock

Haripin Chandra

Chun Christine Dong

Anupama Mallikarjunan

Richard E Patrick

John Giles Langan

Masato Yonezawa

Douglas Paul Dee

Andrew Joseph Woytek

Hareesh Thridandam

Christopher Robert Cording

Masanobu Matsunaga

Hoshang Subawalla

Richard Linton Samsal

Richard Vincent Pearce

Steven Arthur Rogers

Martin Jay Plishka

Arron D Varn

Isaac Patrick West

Danielle Megan King

Herbert David Johnson

Richard R Bodette

Mario Joseph Moniz

Peter Richard Badowski

Gerald W Klein

Described herein are compositions for depositing a carbon-doped silicon containing film wherein the composition comprises a first precursor comprising at least one compound selected from the group consisting of: an organoaminoalkylsilane having a formula of RSi(NRR)Hwherein x=1, 2, 3; an organoalkoxyalkylsilane having a formula of RSi(OR)Hwherein x=1, 2, 3; an organoaminosilane having a formula of RN(SiR(NRR)H); an organoaminosilane having a formula of RN(SiRLH)and combinations thereof; and optionally a second precursor comprising a compound having the formula: Si(NRR)H. Also described herein are methods for depositing a carbon-doped silicon-containing film using the composition wherein the method is one selected from the following: cyclic chemical vapor deposition (CCVD), atomic layer deposition (ALD), plasma enhanced ALD (PEALD) and plasma enhanced CCVD (PECCVD).

Compositions and processes for depositing carbon-doped silicon-containing films

The present invention is a process for forming an air gap within a substrate, the process comprising: providing a substrate; depositing a sacrificial material by deposition of at least one sacrificial material precursor; depositing a composite layer; removal of the porogen material in the composite layer to form a porous layer and contacting the layered substrate with a removal media to substantially remove the sacrificial material and provide the air gaps within the substrate; wherein the at least one sacrificial material precursor is selected from the group consisting of: an organic porogen; silicon, and a polar solvent soluble metal oxide and mixtures thereof.

Materials and methods of forming controlled void

A system for providing a high purity acetylene comprising 100 ppm or less solvent to a point of use comprising a storage vessel that houses an acetylene feed steam comprising acetylene and solvent; a cooling system that maintains the storage vessel and provides the acetylene feed stream at a temperature ranging from 20&#xb0; C. to &#x2212;50&#xb0; C.; and a purifier in fluid communication with the storage vessel wherein the acetylene feed stream is introduced into the purifier at a temperature ranging from &#x2212;50&#xb0; C. to 30&#xb0; C. to remove at least a portion of the solvent contained therein and provide the high purity acetylene.

Process and system for providing acetylene

This invention discloses the method of forming silicon nitride, silicon oxynitride, silicon oxide, carbon-doped silicon nitride, carbon-doped silicon oxide and carbon-doped oxynitride films at low deposition temperatures. The silicon containing precursors used for the deposition are monochlorosilane (MCS) and monochloroalkylsilanes. The method is preferably carried out by using plasma enhanced atomic layer deposition, plasma enhanced chemical vapor deposition, and plasma enhanced cyclic chemical vapor deposition.

Low temperature deposition of silicon-containing films

The present invention is a process of plasma enhanced cyclic chemical vapor deposition of silicon nitride, silicon carbonitride, silicon oxynitride, silicon carboxynitride, and carbon doped silicon oxide from alkylaminosilanes having Si&#x2014;H, preferably of the formula (RRN)SiHwherein Rand Rare selected independently from Cto Cand a nitrogen or oxygen source, preferably ammonia or oxygen has been developed to provide films with improved properties such as etching rate, hydrogen concentrations, and stress as compared to films from thermal chemical vapor deposition.

Plasma enhanced cyclic chemical vapor deposition of silicon-containing films

Method for recovering a desired component from a waste gas comprising (a) at an operating facility, introducing a waste gas comprising the desired component and one or more undesired components into an adsorber containing adsorbent material selective for the desired component, adsorbing at least a portion of the desired component therein, (b) terminating flow of waste gas into the adsorber; and (c) recovering and concentrating the desired component by either (1) isolating the adsorber, transporting the adsorber to a central processing facility, or (2) withdrawing from the adsorber an intermediate gas enriched in the desired component, compressing the intermediate gas and storing it in a vessel, isolating the vessel, transporting the vessel to a central processing facility to provide a concentrated product further enriched in the desired component.

Method for recovering high-value components from waste gas streams

An apparatus and process for recovering a desired gas such as xenon difluoride, xenon, argon, helium or neon, from the effluent of a chemical process reactor that utilizes such gases alone or in a gas mixture or in a molecule that becomes decomposed wherein the chemical process reactor uses a sequence of different gas composition not all of which contain the desired gas and the desired gas is captured and recovered substantially only during the time the desired gas is in the effluent.

Method and equipment for selectively collecting process effluent

The present invention discloses the improvements to a vacuum swing adsorption (VSA) process used for Xe recovery. By only collecting the recovered gas mixture after the initial evacuation of Nfrom the adsorbent vessel and void space, the recovered Xe is not diluted by Ncontained in the adsorbent vessel and void space. The concentration of the recovered Xe can by increased (high purity), simultaneously little Xenon is lost. During the initial evacuation of N, the vessel has been evacuated to a pressure less than 1 atmospheric pressure, for example, from 100 to 1 torr.

Recovering of xenon by adsorption process

The present invention is a process for forming an air gap within a substrate, the process comprising: providing a substrate; depositing a sacrificial material by deposition of at least one sacrificial material precursor; depositing a composite layer; removale of the porogen material in the composite layer to form a porous layer and contacting the layered substrate with a removal media to substantially remove the sacrificial material and provide the air gaps within the substrate; wherein the at least one sacrificial material precursor is selected from the group consisting of: an organic porogen; silicon, and a polar solvent soluble metal oxide and mixtures thereof.

This invention relates to a process for selective removal of materials, such as: silicon, molybdenum, tungsten, titanium, zirconium, hafnium, vanadium, tantalum, niobium, boron, phosphorus, germanium, arsenic, and mixtures thereof, from silicon dioxide, silicon nitride, nickel, aluminum, TiNi alloy, photoresist, phosphosilicate glass, boron phosphosilicate glass, polyimides, gold, copper, platinum, chromium, aluminum oxide, silicon carbide and mixtures thereof. The process is related to the important applications in the cleaning or etching process for semiconductor deposition chambers and semiconductor tools, devices in a micro electro mechanical system (MEMS), and ion implantation systems. Methods of forming XeFby reacting Xe with a fluorine containing chemical are also provided, where the fluorine containing chemical is selected from the group consisting of F, NF, CF, CF, CF, SF, a plasma containing F atoms generated from an upstream plasma generator and mixtures thereof.

Selective etching and formation of xenon difluoride

Process solutions comprising one or more surfactants are used to reduce the number of defects in the manufacture of semiconductor devices. In certain preferred embodiments, the process solution of the present invention may reduce post-development defects such as pattern collapse when employed as a rinse solution either during or after the development of the patterned photoresist layer. Also disclosed is a method for reducing the number of pattern collapse defects on a plurality of photoresist coated substrates employing the process solution of the present invention.

Process solutions containing surfactants

A system and a process for providing acetylene, preferably at a high purity level (e.g., comprising 100 parts per million ('ppm'), or 10 ppm, or 1 ppm, or 100 parts per billion ('ppb'), or 10 ppb, or 1 ppb or less of solvent), to a point of use, such as a semiconductor manufacturing process, is described herein. In one aspect, there is provided a process for providing a process for providing a high purity acetylene comprising 100 ppm or less solvent to a point of use comprising: providing an acetylene feed stream comprising acetylene and solvent at a temperature ranging from 20&#xb0; C. to &#x2212;50&#xb0; C.; and introducing the acetylene feed stream to a purifier at a temperature ranging from &#x2212;50&#xb0; C. to 30&#xb0; C. to remove at least a portion of the solvent contained therein and provide the high purity acetylene.

Low dielectric materials and films comprising same have been identified for improved performance when used as interlevel dielectrics in integrated circuits as well as methods for making same. In one aspect of the present invention, an organosilicate glass film is exposed to an ultraviolet light source wherein the film after exposure has an at least 10% or greater improvement in its mechanical properties (i.e., material hardness and elastic modulus) compared to the as-deposited film.

Mechanical enhancement of dense and porous organosilicate materials by UV exposure

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Orefield, PA, United States of America

Eugene Joseph Karwacki, Jr