The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 02, 2012
Filed:
Jan. 27, 2009
Dingjun Wu, Macungie, PA (US);
Eugene Joseph Karwacki, Jr., Orefield, PA (US);
Anupama Mallikarjunan, Macungie, PA (US);
Andrew David Johnson, Doylestown, PA (US);
Dingjun Wu, Macungie, PA (US);
Eugene Joseph Karwacki, Jr., Orefield, PA (US);
Anupama Mallikarjunan, Macungie, PA (US);
Andrew David Johnson, Doylestown, PA (US);
Air Products and Chemicals, Inc., Allentown, PA (US);
Abstract
This invention relates to a process for selective removal of materials, such as: silicon, molybdenum, tungsten, titanium, zirconium, hafnium, vanadium, tantalum, niobium, boron, phosphorus, germanium, arsenic, and mixtures thereof, from silicon dioxide, silicon nitride, nickel, aluminum, TiNi alloy, photoresist, phosphosilicate glass, boron phosphosilicate glass, polyimides, gold, copper, platinum, chromium, aluminum oxide, silicon carbide and mixtures thereof. The process is related to the important applications in the cleaning or etching process for semiconductor deposition chambers and semiconductor tools, devices in a micro electro mechanical system (MEMS), and ion implantation systems. Methods of forming XeFby reacting Xe with a fluorine containing chemical are also provided, where the fluorine containing chemical is selected from the group consisting of F, NF, CF, CF, CF, SF, a plasma containing F atoms generated from an upstream plasma generator and mixtures thereof.