The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 09, 2014
Filed:
Feb. 27, 2012
Hareesh Thridandam, Carlsbad, CA (US);
Manchao Xiao, San Diego, CA (US);
Xinjian Lei, Vista, CA (US);
Thomas Richard Gaffney, Carlsbad, CA (US);
Eugene Joseph Karwacki, Jr., Orefield, PA (US);
Hareesh Thridandam, Carlsbad, CA (US);
Manchao Xiao, San Diego, CA (US);
Xinjian Lei, Vista, CA (US);
Thomas Richard Gaffney, Carlsbad, CA (US);
Eugene Joseph Karwacki, Jr., Orefield, PA (US);
Air Products and Chemicals, Inc., Allentown, PA (US);
Abstract
The present invention is a process of plasma enhanced cyclic chemical vapor deposition of silicon nitride, silicon carbonitride, silicon oxynitride, silicon carboxynitride, and carbon doped silicon oxide from alkylaminosilanes having Si—H, preferably of the formula (RRN)SiHwherein Rand Rare selected independently from Cto Cand a nitrogen or oxygen source, preferably ammonia or oxygen has been developed to provide films with improved properties such as etching rate, hydrogen concentrations, and stress as compared to films from thermal chemical vapor deposition.