Tokyo, Japan

Etsuo Wani


Average Co-Inventor Count = 5.0

ph-index = 2

Forward Citations = 46(Granted Patents)


Location History:

  • Fuchu, JP (1992)
  • Kyoto, JP (2005)
  • Tokyo, JP (1984 - 2012)

Company Filing History:

goldMedal3 out of 256 
 
Anelva Corporation
 patents
silverMedal3 out of 441 
 
Ulvac, Inc.
 patents
bronzeMedal3 out of 8,776 
 
Sanyo Electric Co., Ltd.
 patents
43 out of 58,129 
 
Sony Corporation
 patents
53 out of 1,257 
 
Hitachi-kokusai Electric Inc.
 patents
62 out of 1,710 
 
National Institute of Advanced Industrial Science and Technology
 patents
72 out of 355 
 
Canon Anelva Corporation
 patents
82 out of 10,295 
 
Tokyo Electron Limited
 patents
92 out of 7,524 
 
Renesas Electronics Corporation
 patents
102 out of 76 
 
Kanto Denka Kogyo Co., Ltd.
 patents
112 out of 21,351 
 
Mitsubishi Denki Kabushiki Kaisha
 patents
121 out of 1,674 
 
Fujitsu Semiconductor Limited
 patents
131 out of 1,960 
 
Showa Denko K.k.
 patents
141 out of 2 
 
Tokyo Eectron Limited
 patents
151 out of 16,453 
 
Panasonic Corporation
 patents
161 out of 4,270 
 
Daikin Industries, Ltd.
 patents
171 out of 2,467 
 
Nec Electronics Corporation
 patents
181 out of 27,375 
 
Matsushita Electric Industrial Co., Ltd.
 patents
191 out of 3,781 
 
Renesas Technology Corp.
 patents
where one patent can have more than one assignee

Years Active: 1984-2012

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5 patents (USPTO):Explore Patents

Title: Etsuo Wani: Innovator in CVD Technology

Introduction

Etsuo Wani is a prominent inventor based in Tokyo, Japan. He has made significant contributions to the field of chemical vapor deposition (CVD) technology. With a total of 5 patents to his name, Wani has developed innovative methods and apparatuses that enhance the efficiency and environmental sustainability of CVD processes.

Latest Patents

Wani's latest patents include a CVD apparatus and a method for cleaning the CVD apparatus. The cleaning method efficiently removes by-products such as SiO or SiN that adhere to and deposit on the surfaces of the inner wall and electrodes in a reaction chamber during the film-forming step. This method utilizes a minimal amount of discharged cleaning gas, thereby reducing environmental impacts such as global warming and lowering costs. Additionally, his CVD apparatus features an exhaust gas recycling path that recycles exhaust gas from the reaction chamber, further enhancing its efficiency.

Another notable patent is a device for cleaning the CVD apparatus, which effectively removes by-products stuck to the internal surfaces during the film-forming process. This apparatus includes a control system that monitors luminous intensity data of F radicals in the reaction chamber through optical emission spectroscopy. The system compares this data with pre-stored luminous intensity data to determine when cleaning should end, ensuring optimal performance.

Career Highlights

Etsuo Wani has worked with notable companies in the industry, including Anelva Corporation and Ulvac, Inc. His experience in these organizations has allowed him to refine his expertise in CVD technology and contribute to advancements in the field.

Collaborations

Wani has collaborated with esteemed colleagues such as Hitoshi Murata and Tsutomu Tsukada. These partnerships have fostered innovation and have been instrumental in the development of his patented technologies.

Conclusion

Etsuo Wani's contributions to CVD technology through his innovative patents and collaborations highlight his role as a leading inventor in the field. His work not only advances technological capabilities but also addresses environmental concerns, making a significant impact on the industry.

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