The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 30, 2005

Filed:

Mar. 18, 2002
Applicants:

Koji Shibata, Kyoto, JP;

Naoto Tsuji, Kyoto, JP;

Hitoshi Murata, Kyoto, JP;

Etsuo Wani, Kyoto, JP;

Yoshihide Kosano, Kyoto, JP;

Inventors:

Koji Shibata, Kyoto, JP;

Naoto Tsuji, Kyoto, JP;

Hitoshi Murata, Kyoto, JP;

Etsuo Wani, Kyoto, JP;

Yoshihide Kosano, Kyoto, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
B08B009/00 ;
U.S. Cl.
CPC ...
Abstract

A cleaning method for CVD apparatus wherein by-products such as SiOand SiNadhered to and deposited on surfaces of the inner wall, electrodes and other parts of a reaction chamber at the stage of film formation can be removed efficiently. Furthermore, the amount of cleaning gas discharged is so small that the influence on environment such as global warming is little and cost reduction can be also attained. After the film formation on a base material surface by the use of CVD apparatus, a fluorinated cleaning gas containing a fluorcompound is converted to plasma by means of a remote plasma generator, and the cleaning gas having been converted to plasma is introduced into a reaction chamber so that any by-products adhered to inner parts of the reaction chamber is removed.


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