Sony Corporation

Sanyo Electric Co., Ltd.

Hitachi-kokusai Electric Inc.

Ulvac, Inc.

Mitsubishi Denki Kabushiki Kaisha

Tokyo Electron Limited

Renesas Electronics Corporation

National Institute of Advanced Industrial Science and Technology

Matsushita Electric Industrial Co., Ltd.

Panasonic Corporation

Daikin Industries, Ltd.

Renesas Technology Corp.

Nec Electronics Corporation

Showa Denko K.k.

Fujitsu Semiconductor Limited

Etsuo Wani

Hitoshi Murata

Katsuo Sakai

Kenji Kameda

Tsutomu Tsukada

Kaoru Abe

Akira Sekiya

Seiji Okura

Masaji Sakamura

Yutaka Ohira

Yuki Mitsui

Taisuke Yonemura

Katsumi Ukai

Koji Shibata

Naoto Tsuji

Yoshihide Kosano

Koki Yasuda

Teruo Saitoh

A CVD apparatus cleaning method that efficiently removes by-product such as SiOor SiNadhered to and deposited on surfaces of an inner wall, an electrode, and the like in a reaction chamber at a film forming step. In the cleaning method the discharged cleaning gas amount is very small, environmental influences such as global warming can be lessened, and cost can be reduced. A CVD apparatus supplying reactive gas into a reaction chamber and forming a deposited film on a surface of a base material provided in the reaction chamber includes an exhaust gas recycling path recycling an exhaust gas reaching the reaction chamber from downstream of a pump on an exhaust path for exhausting a gas from an inner part of the reaction chamber through the pump.

CVD apparatus and method of cleaning the CVD apparatus

An apparatus for cleaning a CVD apparatus that can efficiently remove a by-product such as SiOor SiNstuck and deposited onto the surface of an internal wall, an electrode, or the like in a reaction chamber in a film forming process, and a method for cleaning a CVD apparatus. A control monitors luminous intensity data of an F radical in a reaction chamber by optical emission spectroscopy and compares the data with calibrated prestored luminous intensity data, and ends cleaning after a predetermined time passes from reaching a luminous intensity saturation point. Furthermore, concentration data of SiFin a gas discharged from the reaction chamber are monitored by a Fourier transform infrared spectrometry and compared with prestored concentration data of SiFto decide that the predetermined time has passed when a predetermined cleaning end point concentration is reached, thereby ending the cleaning.

Device for cleaning CVD device and method of cleaning CVD device

A cleaning method for CVD apparatus wherein by-products such as SiOand SiNadhered to and deposited on surfaces of the inner wall, electrodes and other parts of a reaction chamber at the stage of film formation can be removed efficiently. Furthermore, the amount of cleaning gas discharged is so small that the influence on environment such as global warming is little and cost reduction can be also attained. After the film formation on a base material surface by the use of CVD apparatus, a fluorinated cleaning gas containing a fluorcompound is converted to plasma by means of a remote plasma generator, and the cleaning gas having been converted to plasma is introduced into a reaction chamber so that any by-products adhered to inner parts of the reaction chamber is removed.

Method of cleaning CVD device and cleaning device therefor

A dry etching apparatus with the use of reactive gas plasma is disclosed. The apparatus comprises a vacuum chamber, and first and second electrodes opposite to each other in the chamber for generating therebetween gas plasma by discharging while introducing reactive gas in the chamber thereby etching a sample placed on the first electrode. A cover member is provided for covering at least the periphery portion positioned at the outer side of the sample on the surface of the first electrode. The reactive gas introducer is provided on the second electrode at the position opposite to the sample thereby directing the gas to the sample.

Dry etching apparatus and method

In a dry etching apparatus comprising a plurality of etching chambers each of which comprises a first and a second electrode member opposite to each other, an object is successively etched in each etching chamber, with the object supported on either the first or the second electrode member, under different distributions of etching rate. When the object is placed on the first electrode member in each etching chamber and a gas is introduced through an aperture formed on the second electrode member, each distribution of etching rate can be varied by changing a position of the aperture. A side wall member may be extended from a periphery of the second electrode member towards the first electrode member in each etching chamber to confine plasma within a space defined by the first and the second electrode members and the side wall member. The side wall member is varied in length and/or diameter from an etching chamber to another to realize the different distributions of etching rate. Alternatively, a ring member may be arranged in a space between the first and the second electrode members in each etching chamber. The different distributions are established by changing a distance between the first and the second electrode members from an etching chamber to another. Electric power for the first and the second electrode members may be varied in each etching chamber.

Dry etching apparatus comprising etching chambers of different etching

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Tokyo, Japan

Etsuo Wani