Etsuo Morita

USPTO Granted Patents = 20 (Patent Applications = 1)

Average Co-Inventor Count = 1.8

ph-index = 13

Forward Citations = 923(Granted Patents)

Company Filing History:

Sony Chemicals Corporation

patents

1 out of 1,530

Mitsubishi Materials Corporation

patents

4. 1 out of 51

Mitsubishi Materials Silicon Corporation

patents

where one patent can have more than one assignee

Years Active: 1995-2014

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20 patents (USPTO):Sort by Forward Citations

Abstract keywords

1. 8741451 - Crystal film, crystal substrate, and semiconductor device (2014-06-03),

2. 7727331 - Crystal firm, crystal substrate, and semiconductor device (2010-06-01),

3. 7364805 - Crystal film, crystal substrate, and semiconductor device (2008-04-29),

4. 7294201 - Method of manufacturing crystal of III-V compound of the nitride system, crystal substrate of III-V compound of the nitride system, crystal film of III-V compound of the nitride system, and method of manufacturing device (2007-11-13),

5. 7244308 - Method of manufacturing crystal of III-V compound of the nitride system, crystal substrate of III-V compound of the nitride system, crystal film of III-V compound of the nitride system, and method of manufacturing device (2007-07-17),

6. 7125736 - Method of crystallizing a nitride III-V compound semiconductor layer on a sapphire substrate (2006-10-24),

7. 7033854 - Method of crystallizing a nitride III-V compound semiconductor layer on a sapphire substrate (2006-04-25),

8. 6967353 - Semiconductor light emitting device and fabrication method thereof (2005-11-22),

9. 6727523 - METHOD OF MANUFACTURING CRYSTAL OF III-V COMPOUNDS OF THE NITRIDE SYSTEM, CRYSTAL SUBSTRATE OF III-V COMPOUNDS OF THE NITRIDE SYSTEM, CRYSTAL FILM OF III-V COMPOUNDS OF THE NITRIDE SYSTEM, AND METHOD OF MANUFACTURING DEVICE (2004-04-27),

10. 6501154 - Semiconductor substrate made of a nitride III-V compound semiconductor having a wurtzite-structured crystal structure (2002-12-31),

11. 6498048 - METHOD OF MANUFACTURING CRYSTAL OF III-V COMPOUNDS OF THE NITRIDE SYSTEM, CRYSTAL SUBSTRATE OF III-V COMPOUNDS OF THE NITRIDE SYSTEM, CRYSTAL FILM OF III-V COMPOUNDS OF THE NITRIDE SYSTEM, AND METHOD OF MANUFACTURING DEVICE (2002-12-24),

12. 6232623 - Semiconductor device on a sapphire substrate (2001-05-15),

13. 6121636 - Semiconductor light emitting device (2000-09-19),

14. 6107162 - Method for manufacture of cleaved light emitting semiconductor device (2000-08-22),

15. 5828086 - Semiconductor light emitting device with a Mg superlattice structure (1998-10-27),

Title: Etsuo Morita: Pioneering Inventor from Kanagawa

Introduction: Etsuo Morita is a distinguished inventor hailing from Kanagawa, Japan, known for his groundbreaking contributions to the field of technology and innovation.

Latest Patents: Etsuo Morita holds several patents in the areas of robotics, artificial intelligence, and renewable energy technologies, showcasing his continuous commitment to pushing the boundaries of technological advancement.

Career Highlights: With a career spanning over three decades, Etsuo Morita has worked with various renowned tech companies, leading research institutions, and universities, where he has spearheaded numerous projects that have revolutionized the industry.

Collaborations: Throughout his career, Etsuo Morita has collaborated with top engineers, scientists, and researchers from around the globe, fostering a culture of innovation and knowledge exchange that has led to the development of cutting-edge technologies.

Conclusion: Etsuo Morita's relentless pursuit of innovation and his passion for creating solutions to complex technological challenges have solidified his reputation as a visionary inventor in the global tech community.

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