The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 22, 2000
Filed:
Apr. 14, 1998
Etsuo Morita, Kanagawa, JP;
Hiroji Kawai, Kanagawa, JP;
Sony Corporation, Tokyo, JP;
Abstract
A semiconductor device such as a semiconductor layer is formed of a compound semiconductor layer of III-V group such as GaN. In the case where the substrate has not any planes that are easy to cleave which coincides with an easy-to-cleave plane of a semiconductor layer grown on the substrate or the substrate easily succumbs to cleavage, then the semiconductor layer together with the substrate can be broken into chips in an easy-to-cleave plane. The cleaved surface of the semiconductor layer can be positively formed as an optically superior surface. A compound semiconductor layer 2 containing at least one of the elements {Ga, Al, In} and N is formed on the substrate 1. This compound semiconductor layer 2 has a pair of facets of {11-20} plane substantially perpendicular to the substrate 1.