The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 22, 2005
Filed:
Jan. 14, 2003
Jun Suzuki, Kanagawa, JP;
Hiroyuki Okuyama, Kanagawa, JP;
Goshi Biwa, Kanagawa, JP;
Etsuo Morita, Kanagawa, JP;
Jun Suzuki, Kanagawa, JP;
Hiroyuki Okuyama, Kanagawa, JP;
Goshi Biwa, Kanagawa, JP;
Etsuo Morita, Kanagawa, JP;
Sony Corporation, Tokyo, JP;
Abstract
A semiconductor light emitting device includes a crystal layer formed on a substrate, the crystal layer having a tilt crystal plane tilted from the principal plane of the substrate, and a first conductive type layer, an active layer, and a second conductive type layer, which are formed on the crystal layer in such a manner as to extend within planes parallel to the tilt crystal plane, wherein the device has a shape formed by removing the apex and its vicinity of the stacked layer structure formed on the substrate. Such a semiconductor light emitting device is excellent in luminous efficiency even if the device has a three-dimensional device structure. The present invention also provides a method of fabricating the above semiconductor light emitting device.