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For the Inventor, By the Inventor

Kanagawa, Japan

Hiroyuki Okuyama

This inventor holds 77 USPTO granted patents and 3 published patent applications and 4 EPO patents, primarily in Semiconductor Light Emitting (CPC class H01L). Top assignees: Sony Corporation, Sony Semiconductor Solutions Corporation. Active years: 1993-2024.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Hiroyuki Okuyama. Retrieved from https://idiyas.com/inventor/hiroyuki-okuyama

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 77 

% Patents Active = 70.1

 

Average Co-Inventor Count = 3.0

ph-index = 16

Forward Citations = 3,220(Granted Patents)

Forward Citations (Not Self Cited) = 3,161(Dec 10, 2025)


Inventors with similar research interests:


Location History:

  • Tokyo, JP (2003 - 2019)
  • Kanagawa, JP (1993 - 2024)

Company Filing History:

goldMedal75 out of 58,145 
 
Sony Corporation
 patents
silverMedal2 out of 3,298 
 
Sony Semiconductor Solutions Corporation
 patents

Years Active: 1993-2024

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Areas of Expertise:
GaN Devices
Image Displays
Light Emitting
Illumination Systems
Semiconductor Elements
Crystal Growth
Manufacturing Methods
Optical Devices
Display Apparatus
Vapor-Phase Growth
Integrated Devices
Lighting Units
77 patents (USPTO):Explore Patents
1. 12021172 - Light-emitting element and image displaying apparatus (2024-06-25),
2. 10516080 - Semiconductor device and apparatus for improved light emission (2019-12-24),
3. 10050177 - GaN based semiconductor light-emitting device and method for producing same (2018-08-14),
4. 9786638 - Light-emitting device and display device (2017-10-10),
5. 9373274 - Light-emitting device and display device (2016-06-21),
6. 9368685 - Semiconductor light emitting device, method of manufacturing the same, image display device, and electronic apparatus (2016-06-14),
7. 8993992 - GaN based semiconductor light-emitting device and method for producing same (2015-03-31),
8. 8946764 - Gallium nitride-based semiconductor element, optical device using the same, and image display apparatus using optical device (2015-02-03),
9. 8928009 - Light emitting device, illuminating device, and display device (2015-01-06),
10. 8741451 - Crystal film, crystal substrate, and semiconductor device (2014-06-03),
11. 8168966 - GaN-based semiconductor light-emitting device, light illuminator, image display planar light source device, and liquid crystal display assembly (2012-05-01),
12. 7956380 - Semiconductor light-emitting device (2011-06-07),
13. 7928452 - GaN-based semiconductor light-emitting element, light-emitting element assembly, light-emitting apparatus, method of manufacturing GaN-based semiconductor light-emitting element, method of driving GaN-based semiconductor light-emitting element, and image display apparatus (2011-04-19),
14. 7727331 - Crystal firm, crystal substrate, and semiconductor device (2010-06-01),
15. 7700959 - Semiconductor light-emitting device, semiconductor light-emitting apparatus, and method of manufacturing semiconductor light-emitting device (2010-04-20),

Title: The Innovations of Hiroyuki Okuyama: A Pioneer in Semiconductor Technology

Introduction: Hiroyuki Okuyama, based in Kanagawa, Japan, is a distinguished inventor with a remarkable portfolio of 77 patents. His contributions to the field of semiconductor technology have significantly impacted the industry, particularly in the development of light-emitting devices and image displaying apparatuses.

Latest Patents: Among his latest innovations, Okuyama has introduced patents such as a light-emitting element that includes a semiconductor layer with distinct features. This element comprises a first conductive-type layer, an active layer, and a second conductive-type layer stacked in a specific order. Additionally, it incorporates a first dielectric layer and a dual-electrode system, enhancing its efficiency and performance.

Another noteworthy patent involves a semiconductor device designed for improved light emission. This device features a first semiconductor layer and a second semiconductor layer arranged at different angles, optimizing the structural design for better functionality.

Career Highlights: Okuyama's professional journey includes significant tenures at renowned companies such as Sony Corporation and Sony Semiconductor Solutions Corporation. His work in these prestigious organizations has propelled advancements in semiconductor technology and innovation.

Collaborations: Throughout his career, Okuyama has collaborated with other talented professionals, including Goshi Biwa and Masato Doi. These collaborative efforts have further enriched his contributions to the industry and the development of cutting-edge technologies.

Conclusion: Hiroyuki Okuyama stands out as a prominent figure in the realm of semiconductor inventions. His extensive patent portfolio and collaborative spirit continue to inspire and shape the future of innovation in this vital technological domain.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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