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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 7700959 B1

PDFFull Text
Expired
Date of Patent:
Apr. 20, 2010

Filed:

Mar. 31, 2005

Semiconductor light-emitting device, semiconductor light-emitting apparatus, and method of manufacturing semiconductor light-emitting device

Applicants:

Jun Suzuki, Kanagawa, JP;

Masato Doi, Kanagawa, JP;

Hiroyuki Okuyama, Kanagawa, JP;

Goshi Biwa, Kanagawa, JP;

Inventors:

Jun Suzuki, Kanagawa, JP;

Masato Doi, Kanagawa, JP;

Hiroyuki Okuyama, Kanagawa, JP;

Goshi Biwa, Kanagawa, JP;

Assignee:

Sony Corporation, Tokyo, JP;

Attorney:

K&L Gates LLP

Primary Examiner:

Ida M Soward

Int. Cl.
CPC ...
H01L 29/18 (2006.01); H01L 33/00 (2006.01); H01L 29/15 (2006.01); H01L 29/22 (2006.01); H01L 31/0256 (2006.01); H01L 31/0296 (2006.01); H01L 29/201 (2006.01); H01L 29/205 (2006.01); H01L 29/227 (2006.01);
U.S. Cl.
CPC ...
Abstract

A semiconductor light-emitting device capable of obtaining a high light reflectance through the use of a high-reflection metal layer formed on the side of an electrode on one side and capable of preventing migration of atoms from the high-reflectance metal layer is provided. Semiconductor layers of the opposite conduction types are formed on the opposite sides of an active layer, and an ohmic contact layer being a thin film for contriving a decrease in contact resistance, a transparent and conductive layer, and a high-reflection metal layer for reflecting light generated in the active layer are sequentially layered on one of the semiconductor layers. Since the transparent conductive layer functions also as a barrier layer and it transmits light, a high light take-out efficiency can be obtained through the reflection at the high-reflectance metal layer.

Find Patent Forward Citations

Suzuki, Jun. (2010). Semiconductor light-emitting device, semiconductor light-emitting apparatus, and method of manufacturing semiconductor light-emitting device (U.S. Patent No. 7700959). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/7700959

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