The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 07, 2011
Filed:
Jan. 12, 2006
Jun Suzuki, Kanagawa, JP;
Masato Doi, Kanagawa, JP;
Goshi Biwa, Kanagawa, JP;
Hiroyuki Okuyama, Kanagawa, JP;
Jun Suzuki, Kanagawa, JP;
Masato Doi, Kanagawa, JP;
Goshi Biwa, Kanagawa, JP;
Hiroyuki Okuyama, Kanagawa, JP;
Sony Corporation, Tokyo, JP;
Abstract
A semiconductor light-emitting device is provided. In an InGaN-based semiconductor light-emitting device including an Ag electrode, a semiconductor layer on the contact side of at least the Ag electrode is a dislocation semiconductor layer of which dislocation density is selected to be less than 1×10) and thereby short-circuit caused by Ag migration generated along this dislocation can be avoided. Thus, this semiconductor light-emitting device is able to solve a problem of a shortened life and a problem with the fraction of defective devices encountered with the InGaN-based semiconductor light-emitting device.