The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 01, 2012
Filed:
Sep. 08, 2006
Goshi Biwa, Kanagawa, JP;
Hiroyuki Okuyama, Kanagawa, JP;
Goshi Biwa, Kanagawa, JP;
Hiroyuki Okuyama, Kanagawa, JP;
Sony Corporation, Tokyo, JP;
Abstract
A GaN-based semiconductor light-emitting device includes (A) a first GaN-based compound semiconductor layerhaving n-type conductivity, (B) an active layerhaving a multi-quantum well structure including well layers and barrier layers for separating between the well layers, and (C) a second GaN-based compound semiconductor layerhaving p-type conductivity. The well layers are disposed in the active layerso as to satisfy the relation d<dwherein dis the well layer density on the first GaN-based compound semiconductor layer side in the active layer and dis the well layer density on the second GaN-based compound semiconductor layer side.