The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 03, 2014
Filed:
Oct. 23, 2007
Etsuo Morita, Kanagawa, JP;
Yousuke Murakami, Kanagawa, JP;
Goshi Biwa, Kanagawa, JP;
Hiroyuki Okuyama, Kanagawa, JP;
Masato Doi, Kanagawa, JP;
Toyoharu Oohata, Kanagawa, JP;
Etsuo Morita, Kanagawa, JP;
Yousuke Murakami, Kanagawa, JP;
Goshi Biwa, Kanagawa, JP;
Hiroyuki Okuyama, Kanagawa, JP;
Masato Doi, Kanagawa, JP;
Toyoharu Oohata, Kanagawa, JP;
Sony Corporation, Tokyo, JP;
Abstract
A crystal foundation having dislocations is used to obtain a crystal film of low dislocation density, a crystal substrate, and a semiconductor device. One side of a growth substrate () is provided with a crystal layer () with a buffer layer () in between. The crystal layer () has spaces (), () in an end of each threading dislocation Delongating from below. The threading dislocation Dis separated from the upper layer by the spaces (), (), so that each threading dislocation Dis blocked from propagating to the upper layer. When the displacement of the threading dislocation Dexpressed by Burgers vector is preserved to develop another dislocation, the spaces (), () vary the direction of its displacement. As a result, the upper layer above the spaces (), () turns crystalline with a low dislocation density.