The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 19, 2000
Filed:
May. 05, 1998
Etsuo Morita, Kanagawa, JP;
Hiroji Kawai, Kanagawa, JP;
Sony Corporation, Tokyo, JP;
Sony Chemicals Corporation, Tokyo, JP;
Abstract
A semiconductor light emitting device is provided, which does not deteriorate in luminance, maintains a high reliability, permits more free choice of an adhesive, and promises effective extraction of light to the exterior even when it is bonded to a lead frame or other support with the adhesive in practical use. In a GaN light emitting diode, GaN compound semiconductor layers are stacked sequentially on a front surface of a sapphire substrate to form a light emitting diode structure, and a reflective film is formed on a rear surface. Alternatively, the GaN compound semiconductor layers forming the light emitting diode structure are selectively removed by etching to define an inverted mesa-shaped end surface, and the reflective film is formed on the end surface. Both the p-side electrode and the n-side electrode are formed on a common side of the substrate where the GaN compound semiconductor layers are formed.