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For the Inventor, By the Inventor

Hilversum, Netherlands

Ernst H A Granneman

This inventor holds 22 USPTO granted patents. Top assignees: Asm International N.v., Asm America, Inc., Asm Microchemistry Oy. Active years: 2002-2016.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Ernst H A Granneman. Retrieved from https://idiyas.com/inventor/ernst-h-a-granneman

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 22

% Patents Active = 86.4

Average Co-Inventor Count = 2.7

ph-index = 13

Forward Citations = 1,580(Granted Patents)


Location History:

  • AD Hilversum, NL (2011)
  • Hilversum, NL (2002 - 2016)

Company Filing History:

goldMedal20 out of 313 
 
Asm International N.v.
 patents
silverMedal1 out of 316 
 
Asm America, Inc.
 patents
bronzeMedal1 out of 19 
 
Asm Microchemistry Oy
 patents

Years Active: 2002-2016

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22 patents (USPTO):Explore Patents
1. 9243330 - Apparatus and method for high-throughput atomic layer deposition (2016-01-26),
2. 9238867 - Apparatus and method for high-throughput atomic layer deposition (2016-01-19),
3. 9127340 - Selective oxidation process (2015-09-08),
4. 8889565 - Selective removal of oxygen from metal-containing materials (2014-11-18),
5. 8367548 - Stable silicide films and methods for making the same (2013-02-05),
6. 8034410 - Protective inserts to line holes in parts for semiconductor process equipment (2011-10-11),
7. 8002463 - Method and device for determining the temperature of a substrate (2011-08-23),
8. 7754013 - Apparatus and method for atomic layer deposition on substrates (2010-07-13),
9. 7427329 - Temperature control for single substrate semiconductor processing reactor (2008-09-23),
10. 7410355 - Method for the heat treatment of substrates (2008-08-12),
11. 7276774 - Trench isolation structures for integrated circuits (2007-10-02),
12. 7153772 - Methods of forming silicide films in semiconductor devices (2006-12-26),
13. 7102235 - Conformal lining layers for damascene metallization (2006-09-05),
14. 7022627 - Method for the heat treatment of substrates (2006-04-04),
15. 6861334 - Method of fabricating trench isolation structures for integrated circuits using atomic layer deposition (2005-03-01),

Title: Inventor Ernst H A Granneman

Introduction: Ernst H A Granneman is a renowned inventor based in Hilversum, Netherlands, known for his groundbreaking contributions to various fields.

Latest Patents: Ernst H A Granneman holds several patents in the areas of technology and engineering, showcasing his innovative mindset and problem-solving abilities.

Career Highlights: Throughout his career, Ernst H A Granneman has demonstrated a keen interest in pushing the boundaries of traditional thinking, leading to the development of cutting-edge solutions that have had a significant impact on industries worldwide.

Collaborations: Ernst H A Granneman has collaborated with leading research institutions, universities, and companies to further his inventions, highlighting his commitment to fostering innovation through partnerships.

Conclusion: Ernst H A Granneman's dedication to innovation and his remarkable contributions to the field make him a standout figure in the world of inventors, with a legacy that continues to inspire future generations.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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