The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 18, 2014

Filed:

Feb. 05, 2010
Applicants:

Jerome Noiray, Leuven, BE;

Ernst H. A. Granneman, Hilversum, NL;

Inventors:

Jerome Noiray, Leuven, BE;

Ernst H. A. Granneman, Hilversum, NL;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/316 (2006.01); H01L 21/3105 (2006.01); H01L 21/28 (2006.01); H01L 21/321 (2006.01);
U.S. Cl.
CPC ...
H01L 21/28176 (2013.01); H01L 21/28211 (2013.01); H01L 21/28247 (2013.01); H01L 21/3105 (2013.01); H01L 21/321 (2013.01);
Abstract

Oxygen is selectively removed from metal-containing materials in a partially-fabricated integrated circuit. In some embodiments, the partially-fabricated integrated circuit has exposed silicon and metal-containing materials, e.g., as part of a transistor. The silicon and metal-containing material are oxidized. Oxygen is subsequently removed from the metal-containing material by an anneal in an atmosphere containing a reducing agent. Advantageously, the silicon oxide formed by the silicon oxidation is maintained while oxygen is removed from the metal-containing material, thereby leaving a high quality metal-containing material along with silicon oxide.


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