The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 05, 2006
Filed:
Dec. 15, 2003
Ivo Raaijmakers, Bilthoven, NL;
Suvi P. Haukka, Helsinki, FI;
Yille A. Saanila, Helsinki, FI;
Pekka J. Soininen, Espoo, FI;
Kai-erik Elers, Helsinki, FI;
Ernst H. A. Granneman, Hilversum, NL;
Ivo Raaijmakers, Bilthoven, NL;
Suvi P. Haukka, Helsinki, FI;
Yille A. Saanila, Helsinki, FI;
Pekka J. Soininen, Espoo, FI;
Kai-Erik Elers, Helsinki, FI;
Ernst H. A. Granneman, Hilversum, NL;
ASM International N.V., Bilthoven, NL;
Abstract
Method and structures are provided for conformal lining of dual damascene structures in integrated circuits. Trenches and contact vias are formed in insulating layers. The trenches and vias are exposed to alternating chemistries to form monolayers of a desired lining material. Exemplary process flows include alternately pulsed metal halide and ammonia gases injected into a constant carrier flow. Self-terminated metal layers are thus reacted with nitrogen. Near perfect step coverage allows minimal thickness for a diffusion barrier function, thereby maximizing the volume of a subsequent filling metal for any given trench and via dimensions.