The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 08, 2015
Filed:
Feb. 05, 2010
Applicants:
Jerome Noiray, Leuven, BE;
Ernst H. A. Granneman, Hilversum, NL;
Inventors:
Jerome Noiray, Leuven, BE;
Ernst H. A. Granneman, Hilversum, NL;
Assignee:
ASM INTERNATIONAL N.V., , NL;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
B05D 5/12 (2006.01); C23C 8/04 (2006.01); C23C 8/10 (2006.01); H01L 21/02 (2006.01); H01L 21/28 (2006.01); H01L 21/314 (2006.01); H01L 21/316 (2006.01);
U.S. Cl.
CPC ...
C23C 8/04 (2013.01); C23C 8/10 (2013.01); H01L 21/02238 (2013.01); H01L 21/02249 (2013.01); H01L 21/28247 (2013.01); H01L 21/3144 (2013.01); H01L 21/31662 (2013.01);
Abstract
Silicon is selectively oxidized relative to a metal-containing material in a partially-fabricated integrated circuit. In some embodiments, the silicon and metal-containing materials are exposed portions of a partially-fabricated integrated circuit and may form part of, e.g., a transistor. The silicon and metal-containing material are oxidized in an atmosphere containing an oxidant and a reducing agent. In some embodiments, the reducing agent is present at a concentration of about 10 vol % or less.