The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 19, 2016

Filed:

May. 20, 2009
Applicants:

Ernst H. A. Granneman, Hilversum, NL;

Herbert Terhorst, Amersfoort, NL;

Inventors:

Ernst H. A. Granneman, Hilversum, NL;

Herbert Terhorst, Amersfoort, NL;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
C30B 25/14 (2006.01); C30B 29/20 (2006.01); C30B 35/00 (2006.01); C23C 16/455 (2006.01); C23C 16/54 (2006.01); H01L 21/677 (2006.01);
U.S. Cl.
CPC ...
C23C 16/54 (2013.01); C23C 16/45551 (2013.01); C30B 25/14 (2013.01); C30B 29/20 (2013.01); C30B 35/005 (2013.01); H01L 21/67784 (2013.01);
Abstract

An atomic layer deposition apparatus for depositing a film in a continuous fashion is described. The apparatus includes a downwardly sloping process tunnel, extending in a transport direction and bounded by at least two tunnel walls. Both walls are provided with a plurality of gas injection channels, whereby the gas injection channels in at least one of the walls, viewed in the transport direction, are connected successively to a first precursor gas source, a purge gas source, a second precursor gas source and a purge gas source respectively, so as to create a series of tunnel segments that—in use—comprise successive zones containing a first precursor gas, a purge gas, a second precursor gas and a purge gas, respectively. The downward slope of the process tunnel enables gravity to drive the floatingly supported substrates through the successive segments, causing the atomic layer deposition of a film onto the substrates.


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