Hwaseong, South Korea

Doohyun Lee

This inventor holds 18 USPTO granted patents and 13 published patent applications and 2 EPO patents, primarily in Semiconductor Devices. Top assignees: Samsung Electronics Co., Ltd., Samsung Electronics Ltd.. Active years: 2021-2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Doohyun Lee. Retrieved from https://idiyas.com/inventor/doohyun-lee

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank
USPTO Granted Patents = 18 

% Patents Active = 100.0

 

Average Co-Inventor Count = 6.0

ph-index = 3

Forward Citations = 20(Granted Patents)


Company Filing History:


Years Active: 2021-2026

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Areas of Expertise:
MOSFET
Transistor
Conductive Structures
Fin Field Effect Transistor
Gate-Channel Leakage
Source/Drain Contact Plug
Silicides
Active Regions
Manufacturing Methods
Protective Layers
Recessed Portion
Mask Pattern Layer
18 patents (USPTO):Explore Patents

Title: The Innovative Contributions of Doohyun Lee

Introduction

Doohyun Lee is a prominent inventor based in Hwaseong-si, South Korea. He has made significant contributions to the field of semiconductor technology, holding a total of 15 patents. His work has been instrumental in advancing the capabilities of semiconductor devices.

Latest Patents

One of his latest patents is a semiconductor device that includes active regions extending in a first direction on a substrate. This device features a gate electrode that intersects the active regions and includes a contact region that protrudes upwardly. The design incorporates an interconnection line on the gate electrode, which is connected to the contact region. The contact region has a lower region with a first width and an upper region with a smaller second width, showcasing innovative engineering in semiconductor design.

Another notable patent is for a multi-bridge channel field effect transistor that reduces gate-channel leakage current. This semiconductor device consists of an active pattern on a substrate, an insulation pattern above the substrate, and channels spaced apart along a perpendicular direction. The gate structure contacts various surfaces of the channels, enhancing the performance and efficiency of the device.

Career Highlights

Doohyun Lee is currently employed at Samsung Electronics Co., Ltd., a leading company in the technology sector. His work at Samsung has allowed him to push the boundaries of semiconductor technology and contribute to the company's reputation for innovation.

Collaborations

He has collaborated with notable coworkers, including Heonjong Shin and Minchan Gwak. These partnerships have fostered a creative environment that encourages the development of groundbreaking technologies.

Conclusion

Doohyun Lee's contributions to semiconductor technology through his patents and work at Samsung Electronics Co., Ltd. highlight his role as a key innovator in the field. His inventions continue to shape the future of technology and enhance the performance of electronic devices.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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