Mosfet semiconductor device and method of manufacturing the same

Abstract

In some embodiments, the semiconductor device includes a substrate comprising a cell region, a dummy region spaced apart from the cell region in a first direction, and a border region between the cell region and the dummy region, an active pattern on the cell region, a device isolation layer on the substrate, source/drain patterns on the active pattern and channel patterns between the source/drain patterns, cell gate electrodes crossing the channel patterns in a second direction, active contacts disposed on the cell region and between the cell gate electrodes and coupled to the source/drain patterns, dummy gate electrodes on the dummy region and on the device isolation layer, dummy contacts on the dummy region and on a side surface of each of the dummy gate electrodes, an interlayer insulating layer on the side surface of each of the dummy gate electrodes, and a dam structure on the border region.