The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 08, 2025
Filed:
Jun. 08, 2022
Samsung Electronics Co., Ltd., Suwon-si, KR;
Doohyun Lee, Hwaseong-si, KR;
Heonjong Shin, Yongin-si, KR;
Hyunho Park, Suwon-si, KR;
Minchan Gwak, Hwaseong-si, KR;
Seon-Bae Kim, Hwaseong-si, KR;
Jinyoung Park, Hwaseong-si, KR;
SAMSUNG ELECTRONICS CO., LTD., Suwon-si, KR;
Abstract
A semiconductor device may include first and second active regions on a substrate, first and second active patterns on the first and second active regions, first and second source/drain patterns on the first and second active patterns, first and second silicide patterns on the first and second source/drain patterns, and first and second active contacts coupled to the first and second source/drain patterns. A lowermost portion of the first active contact is at a level higher than that of a lowermost portion of the second active contact. A thickness of the first silicide pattern is greater than that of the second silicide pattern.