The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 19, 2022
Filed:
Jul. 17, 2019
Applicant:
Samsung Electronics Co., Ltd., Suwon-si, KR;
Inventors:
Doohyun Lee, Hwaseong-si, KR;
Hyun-Seung Song, Hwaseong-si, KR;
Yeongchang Roh, Gwangju, KR;
Heonjong Shin, Yongin-si, KR;
Sora You, Cheonan-si, KR;
Yongsik Jeong, Suwon-si, KR;
Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/535 (2006.01); H01L 29/08 (2006.01); H01L 29/423 (2006.01); H01L 23/532 (2006.01); H01L 29/417 (2006.01); H01L 29/49 (2006.01); H01L 21/28 (2006.01); H01L 29/45 (2006.01);
U.S. Cl.
CPC ...
H01L 29/41775 (2013.01); H01L 23/535 (2013.01); H01L 23/53209 (2013.01); H01L 29/0847 (2013.01); H01L 29/41791 (2013.01); H01L 29/42376 (2013.01); H01L 29/4958 (2013.01); H01L 29/4966 (2013.01); H01L 21/28079 (2013.01); H01L 21/28088 (2013.01); H01L 29/456 (2013.01);
Abstract
A semiconductor device comprising a gate electrode on a substrate, a source/drain pattern on the substrate on a side of the gate electrode, and a gate contact plug on the gate electrode are disclosed. The gate contact plug may include a first gate contact segment, and a second gate contact segment that extends in a vertical direction from a top surface of the first gate contact segment. An upper width of the first gate contact segment may be greater than a lower width of the second gate contact segment.