Semiconductor devices including conductive structures

Abstract

Semiconductor devices and fabrication methods thereof. For example, a semiconductor device may include a dielectric structure, and first conductive structures and second conductive structures. The dielectric structure may include a first dielectric layer that surrounds the first conductive structures and a second dielectric layer that surrounds the second conductive structures. The first dielectric layer may include a first intervention between the first conductive structures. The second dielectric layer may include a second intervention between the second conductive structures. A width in a first direction of the first intervention may decrease in a second direction from a top surface toward a bottom surface of the first intervention. A width in the first direction of the second intervention may increase in the second direction from a top surface toward a bottom surface of the second intervention. The first dielectric layer and the second dielectric layer may include different dielectric materials.