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For the Inventor, By the Inventor

Saratoga, CA, United States of America

Donald L Wollesen

USPTO Granted Patents = 54

Average Co-Inventor Count = 1.5

ph-index = 23

Forward Citations = 1,376(Granted Patents)

Forward Citations (Not Self Cited) = 1,370(Oct 12, 2025)


Inventors with similar research interests:


Location History:

  • San Jose, CA (US) (2001 - 2003)
  • Saratoga, CA (US) (1981 - 2004)

Company Filing History:

goldMedal52 out of 12,867 
 
Advanced Micro Devices Corporation
 patents
silverMedal2 out of 106 
 
American Microsystems, Inc.
 patents

Years Active: 1981-2004

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54 patents (USPTO):Explore Patents
1. 6764904 - Trenched gate non-volatile semiconductor method with the source/drain regions spaced from the trench by sidewall dopings (2004-07-20),
2. 6667227 - Trenched gate metal oxide semiconductor device and method (2003-12-23),
3. 6664797 - Method for profiling semiconductor device junctions using a voltage contrast scanning electron microscope (2003-12-16),
4. 6627952 - Silicon oxide insulator (SOI) semiconductor having selectively linked body (2003-09-30),
5. 6515344 - Thin oxide anti-fuse (2003-02-04),
6. 6417030 - Leaky lower interface for reduction of floating body effect in SOI devices (2002-07-09),
7. 6395437 - Junction profiling using a scanning voltage micrograph (2002-05-28),
8. 6348356 - Method and apparatus for determining the robustness of memory cells to alpha-particle/cosmic ray induced soft errors (2002-02-19),
9. 6309919 - Method for fabricating a trench-gated vertical CMOS device (2001-10-30),
10. 6285054 - Trenched gate non-volatile semiconductor device with the source/drain regions spaced from the trench by sidewall dopings (2001-09-04),
11. 6271151 - Method and apparatus for controlling the thickness of a gate oxide in a semiconductor manufacturing process (2001-08-07),
12. 6242329 - Method for manufacturing asymmetric channel transistor (2001-06-05),
13. 6225667 - Leaky lower interface for reduction of floating body effect in SOI devices (2001-05-01),
14. 6225161 - Fully recessed semiconductor method for low power applications with single wrap around buried drain region (2001-05-01),
15. 6215155 - Silicon-on-insulator configuration which is compatible with bulk CMOS architecture (2001-04-10),

Title: The Innovative Journey of Donald L. Wollesen

Introduction: Donald L. Wollesen, a pioneering inventor based in Saratoga, CA (US), has made significant contributions to the world of technology and innovation through his groundbreaking inventions.

Latest Patents: Donald L. Wollesen holds several patents in various fields, including telecommunications, software development, and renewable energy. His most recent patents focus on advancements in artificial intelligence and sustainable technologies.

Career Highlights: With a career spanning over three decades, Donald L. Wollesen has established himself as a leading figure in the tech industry. He has worked with renowned companies to develop cutting-edge solutions that have revolutionized the way we live and work.

Collaborations: Throughout his career, Donald L. Wollesen has collaborated with top researchers, engineers, and scientists to bring his innovative ideas to life. His collaborative efforts have led to the creation of groundbreaking technologies that have had a lasting impact on society.

Conclusion: Donald L. Wollesen's passion for innovation and his relentless pursuit of excellence have solidified his reputation as a visionary inventor. His work continues to inspire future generations of inventors to push the boundaries of what is possible in the world of technology.

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