The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 30, 2001
Filed:
Jan. 25, 1999
Applicant:
Inventors:
Yowjuang W. Liu, San Jose, CA (US);
Donald L. Wollesen, Saratoga, CA (US);
Assignee:
Advanced Micro Devices, Inc., Sunnyvale, CA (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/18238 ;
U.S. Cl.
CPC ...
H01L 2/18238 ;
Abstract
Complementary metal-oxide-semiconductor (CMOS) transistors (,) are formed with vertical channel regions (,) on an insulator substrate (,). Highly doped polysilicon gates (,) are formed in trenches (,) to extend laterally around the channel regions (,) as insulatively displaced therefrom by gate insulators (,) that are grown on the sidewalls of the trenches (,). The transistors (,), which are formed in respective mesas (,) have deeply implanted source regions (,) that are ohmically connected to the semiconductor surface via respective source connector regions (,).