The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 05, 2001
Filed:
Feb. 03, 1999
Carl Robert Huster, Sunnyvale, CA (US);
Concetta Riccobene, Mountain View, CA (US);
Richard Rouse, San Francisco, CA (US);
Donald L. Wollesen, Saratoga, CA (US);
Advanced Micro Devices, Inc., Sunnyvale, CA (US);
Abstract
A method for manufacturing a field effect transistor (,) includes steps of forming a gate stack (,) on the surface (,) of a semiconductor substrate (,), and defining source/drain regions (,) on either side of the gate stack and a channel region (,) under the gate stack. The channel region has one end (,) proximate a first source/drain region and another end (,) proximate a second source/drain region. The method further includes forming a masking layer (,) on the surface of the semiconductor substrate. The masking layer has a nominal alignment position and a misalignment tolerance. The method still further includes implanting doping ions in the semiconductor substrate to asymmetrically dope the field effect transistor, including selecting a tilt angle and a rotation angle (B, D, F, H) sufficient to ensure shadowing of one end of the channel region from implantation of the doping ions.