IDiyas

For the Inventor, By the Inventor

San Jose, CA, United States of America

Carl Robert Huster

USPTO Granted Patents = 18

Average Co-Inventor Count = 2.3

ph-index = 8

Forward Citations = 394(Granted Patents)


Location History:

  • San Jose, CA (US) (2001 - 2003)
  • Sunnyvale, CA (US) (2001 - 2003)

Company Filing History:

goldMedal18 out of 12,867 
 
Advanced Micro Devices Corporation
 patents

Years Active: 2001-2003

Loading Chart...
18 patents (USPTO):Explore Patents
1. 6667512 - Asymmetric retrograde halo metal-oxide-semiconductor field-effect transistor (MOSFET) (2003-12-23),
2. 6548335 - Selective epitaxy to reduce gate/gate dielectric interface roughness (2003-04-15),
3. 6531347 - Method of making recessed source drains to reduce fringing capacitance (2003-03-11),
4. 6518072 - Deposited screen oxide for reducing gate edge lifting (2003-02-11),
5. 6487121 - Method of programming a non-volatile memory cell using a vertical electric field (2002-11-26),
6. 6426279 - Epitaxial delta doping for retrograde channel profile (2002-07-30),
7. 6396103 - Optimized single side pocket implant location for a field effect transistor (2002-05-28),
8. 6395606 - MOSFET with metal in gate for reduced gate resistance (2002-05-28),
9. 6391767 - Dual silicide process to reduce gate resistance (2002-05-21),
10. 6337246 - Method for inhibiting tunnel oxide growth at the edges of a floating gate during semiconductor device processing (2002-01-08),
11. 6329687 - Two bit flash cell with two floating gate regions (2001-12-11),
12. 6329273 - Solid-source doping for source/drain to eliminate implant damage (2001-12-11),
13. 6268624 - Method for inhibiting tunnel oxide growth at the edges of a floating gate during semiconductor device processing (2001-07-31),
14. 6255165 - Nitride plug to reduce gate edge lifting (2001-07-03),
15. 6242329 - Method for manufacturing asymmetric channel transistor (2001-06-05),

Title: The Innovations of Carl Robert Huster

Introduction

Carl Robert Huster is a prominent inventor based in San Jose, CA. He has made significant contributions to the field of semiconductor technology, holding a total of 18 patents. His work primarily focuses on enhancing the performance and efficiency of metal-oxide-semiconductor field-effect transistors (MOSFETs).

Latest Patents

One of Huster's latest patents is for an asymmetric retrograde halo metal-oxide-semiconductor field-effect transistor (MOSFET). This invention includes a semiconductor substrate with a gate formed over it, defining a channel that has a source side and a drain side. The retrograde halo doped area is created in the source side of the channel using tilted ion implantation. This asymmetrical doping arrangement allows for a specified level of off-state leakage current without compromising saturation drive current and transconductance. Another notable patent focuses on selective epitaxy to reduce gate/gate dielectric interface roughness. This innovation increases channel carrier mobility by minimizing surface scattering, achieved by depositing a layer of silicon through selective epitaxy before gate oxide formation.

Career Highlights

Huster is currently employed at Advanced Micro Devices Corporation, where he continues to push the boundaries of semiconductor technology. His work has been instrumental in developing advanced MOSFET designs that enhance device performance.

Collaborations

Huster has collaborated with notable colleagues, including Timothy J Thurgate and Daniel Sobek, contributing to various innovative projects within the semiconductor industry.

Conclusion

Carl Robert Huster's contributions to semiconductor technology through his patents and collaborations highlight his role as a leading inventor in the field. His work continues to influence advancements in MOSFET technology, showcasing the importance of innovation in electronics.

This text is generated by artificial intelligence and may not be accurate.
Please report any incorrect information to support@idiyas.com
Loading…