The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 28, 2002
Filed:
Feb. 03, 1999
Concetta Riccobene, Mountain View, CA (US);
Carl Robert Huster, Sunnyvale, CA (US);
Advanced Micro Devices, Inc., Sunnyvale, CA (US);
Abstract
A field effect transistor ( ) having a source region ( ) and a drain region ( ) includes a source side halo region ( ) formed at a junction between the source region and a channel region to substantially interrupt off state leakage current. The source side halo region is formed by implanting ( ) first doping ions near the surface at the source side of the channel and implanting ( ) second doping ions deeper in the channel, near the depth of a source extension ( ). In this manner, optimization of leakage current of the field effect transistor is made independent of the drive current of the field effect transistor.