The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 08, 2002
Filed:
Apr. 02, 2001
Daniel Sobek, Portola Valley, CA (US);
Timothy Thurgate, Sunnyvale, CA (US);
Carl R. Huster, San Jose, CA (US);
Tuan Duc Pham, Santa Clara, CA (US);
Mark T. Ramsbey, Sunnyvale, CA (US);
Sameer S. Haddad, San Jose, CA (US);
Advanced Micro Devices, Inc., Sunnyvale, CA (US);
Abstract
A method for making a ULSI MOSFET chip includes forming a MOSFET gate stack on a substrate, with a tunnel oxide layer being sandwiched between the gate stack and substrate. To prevent thickening of the tunnel oxide layer into a “gate edge lifting” profile during subsequent oxidation-causing steps, at least one protective barrier film is deposited or grown over the gate stack and tunnel oxide layer immediately after gate stack formation. Then, subsequent steps, including forming source and drain regions for the gate stack, can be undertaken without causing thickening of the tunnel oxide layer.