Richard P Rouse

Title: Richard P. Rouse: Semiconductor Device Inventor

Introduction

Richard P. Rouse is an inventor associated with semiconductor device technologies and Advanced Micro Devices Corporation. Based in San Francisco, California, he is credited with 8 patents.

Latest Patents

Rouse’s listed patents address semiconductor design and manufacturing.

“Method of Making Recessed Source Drains to Reduce Fringing Capacitance” describes forming source and drain regions below the semiconductor substrate’s main surface. The recessed regions reduce capacitance between the gate electrode and source/drain regions. Sidewall spacers and a silicide layer are then formed on the gate stack, with the design intended to maintain circuit reliability.

“Non-Uniform Channel Profile via Enhanced Diffusion” describes creating a non-uniform channel doping profile to reduce leakage current. Transient enhanced diffusion forms a high-impurity region between the channel and source regions. This region helps reduce threshold-voltage roll-off.

Career Highlights

Rouse’s listed work focuses on semiconductor devices, including techniques for managing capacitance, leakage current, and threshold-voltage behavior. His patent record connects these innovations with Advanced Micro Devices Corporation.

Collaborations

Ming Yin Hao and Effiong Etukudo Ibok are identified as Rouse’s coworkers.

Conclusion

Richard P. Rouse’s patent work reflects contributions to semiconductor device design, particularly methods aimed at improving electrical performance and reliability.