Dmytro Chumakov

This inventor holds 19 USPTO granted patents and 2 published patent applications, primarily in Semiconductor Technology. Top assignees: Globalfoundries Inc., Advanced Micro Devices Corporation. Active years: 2008-2015.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Dmytro Chumakov. Retrieved from https://idiyas.com/inventor/dmytro-chumakov

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank

USPTO Granted Patents = 19 (Patent Applications = 2)

% Patents Active = 42.1

Average Co-Inventor Count = 1.6

ph-index = 4

Forward Citations = 41(Granted Patents)

Company Filing History:

Advanced Micro Devices Corporation

patents

Years Active: 2008-2015

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Areas of Expertise:

Semiconductor Device

DRAM Cell

Integrated Circuits

Capacitor

Nanochannel Plate

Microstructure Analysis

Patterning Methods

Chip Packaging

Feature Dimensions

Stress Reduction

Dopant Marker

19 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 9070639 - Shrinkage of critical dimensions in a semiconductor device by selective growth of a mask material (2015-06-30),

2. 9006906 - DRAM cell based on conductive nanochannel plate (2015-04-14),

3. 8946019 - Semiconductor device comprising a buried capacitor formed in the contact level (2015-02-03),

4. 8925396 - Method and system for particles analysis in microstructure devices by isolating particles (2015-01-06),

5. 8785271 - DRAM cell based on conductive nanochannel plate (2014-07-22),

6. 8748199 - In-situ measurement of feature dimensions (2014-06-10),

7. 8598579 - Test structure for ILD void testing and contact resistance measurement in a semiconductor device (2013-12-03),

8. 8569171 - Mask-based silicidation for FEOL defectivity reduction and yield boost (2013-10-29),

9. 8563426 - Shrinkage of contact elements and vias in a semiconductor device by incorporating additional tapering material (2013-10-22),

10. 8546915 - Integrated circuits having place-efficient capacitors and methods for fabricating the same (2013-10-01),

11. 8541311 - Integrated circuit fabrication methods utilizing embedded hardmask layers for high resolution patterning (2013-09-24),

12. 8518721 - Dopant marker for precise recess control (2013-08-27),

13. 8508053 - Chip package including multiple sections for reducing chip package interaction (2013-08-13),

14. 8497583 - Stress reduction in chip packaging by a stress compensation region formed around the chip (2013-07-30),

15. 8435885 - Method and system for extracting samples after patterning of microstructure devices (2013-05-07),

Title: The Innovative Journey of Dmytro Chumakov in Semiconductor Technologies

Introduction: Dmytro Chumakov, a prominent inventor based in Dresden, Germany, has made significant contributions to the field of semiconductor technologies. With an impressive portfolio of 19 patents, his innovative work focuses on enhancing manufacturing techniques and device architectures that are critical in the electronics industry.

Latest Patents: Dmytro's recent patents reflect his expertise in semiconductor fabrication. One of his noteworthy inventions is the method for the shrinkage of critical dimensions in a semiconductor device by selective growth of a mask material. This innovation involves the formation of etch masks from a mask layer stack, enabling a highly uniform adjustment of the target width to achieve sophisticated contact openings. Another significant patent pertains to a DRAM cell based on a conductive nanochannel plate, where he innovates by forming a capacitor in nano channels of a conductive body, incorporating intricate steps like source contact formation, insulating layer incorporation, and channel metalization.

Career Highlights: Throughout his career, Dmytro has worked with renowned companies such as GlobalFoundries Inc., where he contributed to advancing semiconductor technology. His extensive experience in this field has positioned him as a key innovator and expert in the industry.

Collaborations: Dmytro has collaborated with talented professionals including Petra Hetzer and Tino Hertzsch. His partnerships have fostered a collaborative environment that encourages innovative ideas and solutions in semiconductor development.

Conclusion: Dmytro Chumakov exemplifies the qualities of a dedicated inventor, pushing boundaries in semiconductor technologies through his inventive patents and collaborative efforts. As he continues to contribute to the field, his work remains influential in shaping the future of electronic devices.

Profile summary based on public USPTO records.

Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]

2 patents pending: