The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 14, 2015

Filed:

Jun. 23, 2014
Applicant:

Globalfoundries Inc., Grand Cayman, KY;

Inventors:

Dmytro Chumakov, Dresden, DE;

Wolfgang Buchholtz, Radebeul, DE;

Petra Hetzer, Dresden, DE;

Assignee:

GLOBALFOUNDRIES Inc., Grand Cayman, KY;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/48 (2006.01); H01L 23/52 (2006.01); H01L 27/108 (2006.01); B82Y 10/00 (2011.01); H01L 49/02 (2006.01);
U.S. Cl.
CPC ...
H01L 27/1082 (2013.01); B82Y 10/00 (2013.01); H01L 27/10852 (2013.01); H01L 28/90 (2013.01);
Abstract

A capacitor is formed in nano channels in a conductive body. Embodiments include forming a source contact through a first inter layer dielectric (ILD), forming a conductive body on the first ILD, forming a second ILD on the conductive body, forming drain and gate contacts through the second ILD, conductive body, and first ILD, forming nano channels in the conductive body, forming an insulating layer in the channels, and metalizing the channels. An embodiment includes forming the nano channels by forming a mask on the second ILD, the mask having features with a pitch of 50 nanometers (nm) to 100 nm, etching the second ILD through the mask, etching the conductive body through the mask to a depth of 80% to 90% of the thickness of the conductive body, and removing the mask.


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