The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 03, 2013
Filed:
Feb. 03, 2011
Applicants:
Dmytro Chumakov, Dresden, DE;
Dirk Utess, Dresden, DE;
Inventors:
Dmytro Chumakov, Dresden, DE;
Dirk Utess, Dresden, DE;
Assignee:
GLOBALFOUNDRIES Inc., Grand Cayman, KY;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 23/58 (2006.01); H01L 29/10 (2006.01); H01L 23/48 (2006.01); H01L 23/52 (2006.01); H01L 29/40 (2006.01); H01L 21/00 (2006.01); H01L 21/66 (2006.01); H01L 21/4763 (2006.01); G01R 31/26 (2006.01);
U.S. Cl.
CPC ...
Abstract
In complex semiconductor devices, the contact characteristics may be efficiently determined on the basis of a test structure which includes a combination of interconnect chain structures and a comb structure including gate electrode structures. Consequently, an increased amount of measurement information may be obtained on the basis of a reduced overall floor space of the test structure. In this manner, the complex manufacturing sequence for forming a contact level of a semiconductor device may be quantitatively estimated and monitored.