The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 29, 2013
Filed:
Jul. 01, 2011
Applicant:
Dmytro Chumakov, Dresden, DE;
Inventor:
Dmytro Chumakov, Dresden, DE;
Assignee:
GLOBALFOUNDRIES Inc., Grand Cayman, KY;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/337 (2006.01);
U.S. Cl.
CPC ...
Abstract
A semiconductor device with reduced defect density is fabricated by forming localized metal silicides instead of full area silicidation. Embodiments include forming a transistor having a gate electrode and source/drain regions on a substrate, forming a masking layer with openings exposing portions of both the gate electrode and source/drain regions over the substrate, depositing metal in the openings on the exposed portions, forming silicides in the openings, and removing unreacted metal and the masking layer.