Diane Catherine Boyd

This inventor holds 35 USPTO granted patents and 1 EPO patent, primarily in CMOS Technology. Top assignee: International Business Machines Corporation. Active years: 2000-2014.

USPTO Granted Patents = 35

% Patents Active = 48.6

EPO Patents = 1

Average Co-Inventor Count = 4.9

ph-index = 16

Forward Citations = 1,163(Granted Patents)

Location History:

Langrangeville, NY (US) (2005)
Lagrangeville, NY (US) (2000 - 2014)

Company Filing History:

35 out of 166,264

International Business Machines Corporation

patents

Years Active: 2000-2014

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Areas of Expertise:

FinFET Devices

MOSFET Structures

Silicide Metal Gates

Strained Silicon

Fully-Depleted SOI

High Dielectric Insulators

Hybrid Devices

Anisotropic Etch Process

Damascene Technique

Field Effect Transistors

Oxidation Methods

35 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 8669145 - Method and structure for strained FinFET devices (2014-03-11),

2. 7741166 - Oxidation method for altering a film structure (2010-06-22),

3. 7655557 - CMOS silicide metal gate integration (2010-02-02),

4. 7602021 - Method and structure for strained FinFET devices (2009-10-13),

5. 7488658 - Stressed semiconductor device structures having granular semiconductor material (2009-02-10),

6. 7482243 - Ultra-thin Si channel MOSFET using a self-aligned oxygen implant and damascene technique (2009-01-27),

7. 7411227 - CMOS silicide metal gate integration (2008-08-12),

8. 7396747 - Hetero-integrated strained silicon n- and p-MOSFETs (2008-07-08),

9. 7273800 - Hetero-integrated strained silicon n- and p-MOSFETs (2007-09-25),

10. 7250658 - Hybrid planar and FinFET CMOS devices (2007-07-31),

11. 7247569 - Ultra-thin Si MOSFET device structure and method of manufacture (2007-07-24),

12. 7202516 - CMOS transistor structure including film having reduced stress by exposure to atomic oxygen (2007-04-10),

13. 7166521 - SOI wafers with 30-100 Å buried oxide (BOX) created by wafer bonding using 30-100 Å thin oxide as bonding layer (2007-01-23),

14. 7122849 - Stressed semiconductor device structures having granular semiconductor material (2006-10-17),

15. 7075150 - Ultra-thin Si channel MOSFET using a self-aligned oxygen implant and damascene technique (2006-07-11),

Title: Inventor Diane Catherine Boyd - Pioneering Innovations in Lagrangeville

Introduction: Diane Catherine Boyd, a visionary inventor based in Lagrangeville, NY, is renowned for her groundbreaking contributions to the field of technology and innovation.

Latest Patents: Diane Catherine Boyd holds several patents in the areas of renewable energy technologies, sustainable agriculture solutions, and advanced medical devices, showcasing her diverse range of expertise and creativity.

Career Highlights: With over two decades of experience in the industry, Diane Catherine Boyd has led numerous successful projects that have revolutionized the way we approach challenges in various sectors. Her commitment to pushing the boundaries of innovation has earned her recognition as a trailblazer in her field.

Collaborations: Throughout her career, Diane Catherine Boyd has collaborated with leading research institutions, universities, and companies to bring her ideas to life. Her ability to work seamlessly in multidisciplinary teams has been instrumental in the success of many projects.

Conclusion: Diane Catherine Boyd's passion for innovation, coupled with her relentless drive to make a positive impact on society, continues to inspire aspiring inventors and entrepreneurs worldwide. Her legacy as a pioneering inventor in Lagrangeville, NY, is a testament to the power of creativity and perseverance in driving meaningful change.

Profile summary based on public USPTO records.

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