The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 10, 2007
Filed:
Dec. 27, 2005
Michael P. Belyansky, Bethel, CT (US);
Diane C. Boyd, LaGrangeville, NY (US);
Bruce B. Doris, Brewster, NY (US);
Oleg Gluschenkov, Poughkeepsie, NY (US);
Michael P. Belyansky, Bethel, CT (US);
Diane C. Boyd, LaGrangeville, NY (US);
Bruce B. Doris, Brewster, NY (US);
Oleg Gluschenkov, Poughkeepsie, NY (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
A structure and method are provided in which a stress present in a film is reduced in magnitude by oxidizing the film through atomic oxygen supplied to a surface of the film. In an embodiment, a mask is used to selectively block portions of the film so that the stress is relaxed only in areas exposed to the oxidation process. A structure and method are further provided in which a film having a stress is formed over source and drain regions of an NFET and a PFET. The stress present in the film over the source and drain regions of either the NFET or the PFET is then relaxed by oxidizing the film through exposure to atomic oxygen to provide enhanced mobility in at least one of the NFET or the PFET while maintaining desirable mobility in the other of the NFET and PFET.