The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 10, 2009

Filed:

Sep. 13, 2006
Applicants:

Bruce B. Doris, Brewster, NY (US);

Michael P. Belyansky, Bethel, CT (US);

Diane C. Boyd, Lagrangeville, NY (US);

Dureseti Chidambarrao, Weston, CT (US);

Oleg Gluschenkov, Poughkeepsie, NY (US);

Inventors:

Bruce B. Doris, Brewster, NY (US);

Michael P. Belyansky, Bethel, CT (US);

Diane C. Boyd, Lagrangeville, NY (US);

Dureseti Chidambarrao, Weston, CT (US);

Oleg Gluschenkov, Poughkeepsie, NY (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/336 (2006.01);
U.S. Cl.
CPC ...
Abstract

A method of fabricating a semiconductor device structure, includes: providing a substrate, providing an electrode on the substrate, forming a recess in the electrode, the recess having an opening, disposing a small grain semiconductor material within the recess, covering the opening to contain the small grain semiconductor material, within the recess, and then annealing the resultant structure.


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