The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 27, 2009
Filed:
May. 18, 2006
Diane C. Boyd, LaGrangeville, NY (US);
Bruce B. Doris, Brewster, NY (US);
Meikei Ieong, Wappingers Falls, NY (US);
Devendra K. Sadana, Pleasantville, NY (US);
Diane C. Boyd, LaGrangeville, NY (US);
Bruce B. Doris, Brewster, NY (US);
Meikei Ieong, Wappingers Falls, NY (US);
Devendra K. Sadana, Pleasantville, NY (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
The present invention provides a method of forming a thin channel MOSFET having low external resistance. The method comprises forming a dummy gate region atop a substrate; implanting oxide forming dopant through said dummy gate to create a localized oxide region in a portion of the substrate aligned to the dummy gate region that thins a channel region; forming source/drain extension regions abutting said channel region; and replacing the dummy gate with a gate conductor.