Sunnyvale, CA, United States of America

Dian Sugiarto

This inventor holds 23 USPTO granted patents, primarily in Dielectric Film Technology. Top assignees: Applied Materials, Inc., Other. Active years: 1999-2010.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Dian Sugiarto. Retrieved from https://idiyas.com/inventor/dian-sugiarto

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank

% Patents Active = 52.2

Average Co-Inventor Count = 4.6

ph-index = 10

Forward Citations = 608(Granted Patents)


Location History:

  • Union City, CA (US) (1999 - 2004)
  • Sunnyvale, CA (US) (2001 - 2010)

Company Filing History:


Years Active: 1999-2010

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Areas of Expertise:
Dielectric Films
Plasma CVD
Silicon Carbide
Silicon Oxygen Carbide
Photoresist Materials
Low Dielectric Constant
Halogen-Doped Silicon Oxide
Plasma Polymerization
Damascene Structures
Oxygen Doping
CVD Techniques
23 patents (USPTO):Explore Patents

Title: The Innovative Contributions of Dian Sugiarto in Silicon Carbide Technology

Introduction: Dian Sugiarto is a prominent inventor based in Sunnyvale, California, known for his significant contributions to the field of semiconductor materials and processes. With an impressive portfolio of 23 patents, he has played a vital role in advancing technology related to low dielectric barrier films, especially those involving silicon carbide.

Latest Patents: Among his latest innovations, Dian has developed methods for depositing low dielectric (low k) barrier films with oxygen doping using plasma-enhanced chemical vapor deposition (PECVD). These methods focus on the deposition of silicon carbide layers that demonstrate significantly reduced current leakage. The silicon carbide layer can act as a barrier layer or be part of a barrier bilayer that includes another barrier layer. The innovative techniques involve reacting a gas mixture consisting of an organosilicon compound, an aliphatic hydrocarbon with carbon-carbon double or triple bonds, and helium in a plasma. Alternatively, the silicon carbide layers can be deposited by reacting a gas mixture of hydrogen or argon combined with an organosilicon compound in a plasma.

Career Highlights: Dian Sugiarto has garnered extensive experience through his work with leading technology companies, notably with Applied Materials, Inc. His journey in the field of innovations has made him a sought-after expert in semiconductor manufacturing and materials technology.

Collaborations: Working alongside distinguished colleagues such as Li-Qun Xia and Peter Wai-Man Lee has allowed Dian to further enhance his expertise and drive collaborative research efforts in semiconductor technologies. Their combined knowledge and skills have contributed to groundbreaking developments in the industry.

Conclusion: Dian Sugiarto's contributions to the field of semiconductor technology, particularly in the development of low dielectric barrier films and silicon carbide applications, highlight his status as a leading inventor. His work continues to impact the semiconductor industry, paving the way for advancements that enhance device performance and efficiency.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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