The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 29, 2010
Filed:
Oct. 21, 2008
Kang Sub Yim, Mountain View, CA (US);
Melissa M. Tam, Fremont, CA (US);
Dian Sugiarto, Sunnyvale, CA (US);
Chi-i Lang, Sunnyvale, CA (US);
Peter Wai-man Lee, San Jose, CA (US);
Li-qun Xia, Santa Clara, CA (US);
Kang Sub Yim, Mountain View, CA (US);
Melissa M. Tam, Fremont, CA (US);
Dian Sugiarto, Sunnyvale, CA (US);
Chi-I Lang, Sunnyvale, CA (US);
Peter Wai-Man Lee, San Jose, CA (US);
Li-Qun Xia, Santa Clara, CA (US);
Applied Materials, Inc., Santa Clara, CA (US);
Abstract
Methods are provided for depositing a silicon carbide layer having significantly reduced current leakage. The silicon carbide layer may be a barrier layer or part of a barrier bilayer that also includes a barrier layer. Methods for depositing oxygen-doped silicon carbide barrier layers are also provided. The silicon carbide layer may be deposited by reacting a gas mixture comprising an organosilicon compound, an aliphatic hydrocarbon comprising a carbon-carbon double bond or a carbon-carbon triple bond, and optionally, helium in a plasma. Alternatively, the silicon carbide layer may be deposited by reacting a gas mixture comprising hydrogen or argon and an organosilicon compound in a plasma.