Fremont, CA, United States of America

Melissa M Tam


Average Co-Inventor Count = 6.0

ph-index = 2

Forward Citations = 22(Granted Patents)


Company Filing History:


Years Active: 2005-2010

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4 patents (USPTO):

Title: The Innovative Contributions of Melissa M. Tam in Semiconductor Technology

Introduction: Melissa M. Tam, an accomplished inventor based in Fremont, California, has made significant strides in the field of semiconductor technology. With a total of four patents to her name, she has contributed to the development of advanced materials that enhance the performance and reliability of electronic devices.

Latest Patents: One of her notable patents includes the development of low dielectric (low k) barrier films with oxygen doping by plasma-enhanced chemical vapor deposition (PECVD). This innovative method provides techniques for depositing a silicon carbide layer that exhibits significantly reduced current leakage. The silicon carbide layer can serve as a barrier layer or as part of a barrier bilayer comprising additional layers. Her methods also detail the incorporation of oxygen-doped silicon carbide barrier layers, which can be deposited by reacting a gas mixture that includes an organosilicon compound, aliphatic hydrocarbons with carbon-carbon double or triple bonds, and optionally, helium in a plasma environment. Alternatively, deposition can occur using a gas mixture that includes hydrogen or argon alongside an organosilicon compound in a plasma.

Career Highlights: Throughout her career, Melissa has been instrumental in advancing semiconductor processing methods at Applied Materials, Inc. Her innovative approaches have had a substantial impact on the manufacture of semiconductors, addressing crucial challenges in the industry.

Collaborations: In her journey, Melissa has collaborated with notable colleagues such as Kang Sub Yim and Dian Sugiarto, fostering a productive environment that encourages innovation and the sharing of ideas.

Conclusion: Melissa M. Tam exemplifies the spirit of innovation and dedication in the field of semiconductor technology. Her work not only pushes the boundaries of what is possible in materials science but also serves as an inspiration for future inventors in the industry.

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