The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 13, 2005
Filed:
Nov. 22, 2002
Seon-mee Cho, Santa Clara, CA (US);
Peter Wai-man Lee, San Jose, CA (US);
Chi-i Lang, Sunnyvale, CA (US);
Dian Sugiarto, Sunnyvale, CA (US);
Chen-an Chen, Milpitas, CA (US);
Li-qun Xia, Santa Clara, CA (US);
Shankar Venkataraman, Santa Clara, CA (US);
Ellie Yieh, San Jose, CA (US);
Seon-Mee Cho, Santa Clara, CA (US);
Peter Wai-Man Lee, San Jose, CA (US);
Chi-I Lang, Sunnyvale, CA (US);
Dian Sugiarto, Sunnyvale, CA (US);
Chen-An Chen, Milpitas, CA (US);
Li-Qun Xia, Santa Clara, CA (US);
Shankar Venkataraman, Santa Clara, CA (US);
Ellie Yieh, San Jose, CA (US);
Applied Materials Inc., Santa Clara, CA (US);
Abstract
A low dielectric constant film having silicon-carbon bonds and dielectric constant of about 3.0 or less, preferably about 2.5 or less, is provided. The low dielectric constant film is deposited by reacting a cyclic organosilicon compound and an aliphatic organosilicon compound with an oxidizing gas while applying RF power. The carbon content of the deposited film is between about 10 and about 30 atomic percent excluding hydrogen atoms, and is preferably between about 10 and about 20 atomic percent excluding hydrogen atoms.