The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 14, 2003
Filed:
Aug. 07, 2001
Wai-Fan Yau, Los Altos, CA (US);
Ju-Hyung Lee, Campbell, CA (US);
Nasreen Gazala Chopra, Belmont, CA (US);
Tzu-Fang Huang, San Jose, CA (US);
David Cheung, Foster City, CA (US);
Farhad Moghadam, Saratoga, CA (US);
Kuo-Wei Liu, San Jose, CA (US);
Yung-Cheng Lu, Taipei, TW;
Ralf B. Willecke, Santa Clara, CA (US);
Paul Matthews, San Jose, CA (US);
Dian Sugiarto, Sunnyvale, CA (US);
Applied Materials, Inc., Santa Clara, CA (US);
Abstract
A method of forming a carbon-doped silicon oxide layer is disclosed. The carbon-doped silicon oxide layer is formed by applying an electric field to a gas mixture comprising an organosilane compound and an oxidizing gas. The carbon-doped silicon oxide layer is compatible with integrated circuit fabrication processes. In one integrated circuit fabrication process, the carbon-doped silicon oxide layer is used as an intermetal dielectric layer. In another integrated circuit fabrication process, the carbon-doped silicon oxide layer is incorporated into a damascene structure.