The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 03, 2006
Filed:
Feb. 21, 2006
Srinivas D Nemani, San Jose, CA (US);
Li-qun Xia, Santa Clara, CA (US);
Dian Sugiarto, Sunnyvale, CA (US);
Ellie Yieh, San Jose, CA (US);
Ping Xu, Fremont, CA (US);
Francimar Campana-schmitt, Milpitas, CA (US);
Jia Lee, Campbell, CA (US);
Srinivas D Nemani, San Jose, CA (US);
Li-Qun Xia, Santa Clara, CA (US);
Dian Sugiarto, Sunnyvale, CA (US);
Ellie Yieh, San Jose, CA (US);
Ping Xu, Fremont, CA (US);
Francimar Campana-Schmitt, Milpitas, CA (US);
Jia Lee, Campbell, CA (US);
Applied Materials, Inc., Santa Clara, CA (US);
Abstract
A method of forming a silicon carbide layer for use in integrated circuit fabrication processes is provided. The silicon carbide layer is formed by reacting a gas mixture comprising a silicon source, a carbon source, and a dopant in the presence of an electric field. The as-deposited silicon carbide layer has a compressibility that varies as a function of the amount of dopant present in the gas mixture during later formation.